发明名称 |
Semiconductor power device with insulated gate and trench-gate structure and corresponding manufacturing method |
摘要 |
A semiconductor power device includes an insulated gate and a trench-gate structure. The trench-gate structure is formed on a semiconductor substrate covered by an epitaxial layer. The trench is formed in the semiconductor to form the device gate region. A dielectric coating is provided on the inner and bottom walls of the trench. The gate region includes a conductive spacer layer on the coating layer only on the inner walls of the trench.
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申请公布号 |
US7205607(B2) |
申请公布日期 |
2007.04.17 |
申请号 |
US20040993917 |
申请日期 |
2004.11.19 |
申请人 |
STMICROELECTRONICS S.R.L |
发明人 |
ALESSANDRIA ANTONINO SEBASTIANO;FRAGAPANE LEONARDO;MAGRI ANGELO |
分类号 |
H01L29/76;H01L21/331;H01L29/08;H01L29/10;H01L29/423;H01L29/49;H01L29/739;H01L29/78 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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