| 摘要 |
A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
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