发明名称 Deposition system to provide preheating of chemical vapor deposition precursors
摘要 Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing.
申请公布号 US7204885(B2) 申请公布日期 2007.04.17
申请号 US20020209840 申请日期 2002.07.31
申请人 MICRON TECHNOLOGY, INC. 发明人 DERDERIAN GARO J.;MORRISON GORDON
分类号 C23C16/52;C23C16/00;C23C16/34;C23C16/44;C23C16/452;C23C16/455 主分类号 C23C16/52
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