发明名称 |
Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate |
摘要 |
Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on the integrated circuit substrate in the peripheral circuit region. A first pad contact plug is provided on the buried contact plug in the cell array region and a second pad contact plug is provided on the resistor in the peripheral circuit region. An ohmic layer is provided between the first pad contact plug and the buried contact plug and between the second pad contact plug and the resistor. Related methods of fabricating integrated circuit devices are also provided.
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申请公布号 |
US7205219(B2) |
申请公布日期 |
2007.04.17 |
申请号 |
US20040823221 |
申请日期 |
2004.04.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH SE-HOON;CHUNG JUNG-HEE;CHOI JAE-HYOUNG;CHOI JEONG-SIK;KIM SUNG-TAE;YOO CHA-YOUNG |
分类号 |
H01L21/44;H01L27/10;H01L21/768;H01L21/8234;H01L21/8242;H01L21/8244;H01L27/108 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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