Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization

摘要

Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.