发明名称 |
Semiconductor light emitting device, its manufacturing method, integrated semiconductor light emitting apparatus, its manufacturing method, illuminating apparatus, and its manufacturing method |
摘要 |
An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
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申请公布号 |
US7205168(B2) |
申请公布日期 |
2007.04.17 |
申请号 |
US20040494972 |
申请日期 |
2004.05.04 |
申请人 |
SONY CORPORATION |
发明人 |
OOHATA TOYOHARU;OKUYAMA HIROYUKI;DOI MASATO;BIWA GOSHI;SUZUKI JUN |
分类号 |
H01L21/00;H01L33/08;H01L33/20;H01L33/32;H01L33/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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