| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high quality silicon carbide structure which can be used in electronic power devices. <P>SOLUTION: In the silicon carbide structure comprising a bulk single crystal silicon carbide substrate and an epitaxial layer of silicon carbide on a surface of the silicon carbide substrate, the epitaxial layer has a half-value width of 25 arc seconds or less in an X-ray rocking curve and the silicon carbide substrate has a half-value width of 100 arc seconds or less in an X-ray rocking curve. Further, the silicon carbide substrate is of the 6H or 4H polytype, and the epitaxial layer has the same polytype as that of the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
