发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the occurrence of particles which is occurred on a substrate due to a substrate processing which is performed by using a substrate processing apparatus which has a plurality of boats holding a plurality of substrates. SOLUTION: In a method for manufacturing a semiconductor device, the substrate processing apparatus including: boats 6a and 6b holding wafers 4 which are a plurality of substrates; and reactor 20, is used. While processing the wafer 4 held by the boat 6a, within the reactor 20, the wafer 4 which is processed next is transferred to the boat 6b in the outside of the reactor 20 by a transfer machine 14. After films are formed on wafer 4, on boat 6a and within the reactor 20 by the processing in the reactor 20, the temperature within the reactor 20 is lowered less than the temperature TFFM during the substrate processing. Thereafter, the boat 6a which holds the processed wafer 4 is unloaded to the outside of the reactor 20. After raising the temperature within the reactor 20 to the temperature TFFM again, the boat 6b which holds the wafer 4 is loaded into the reactor 20. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007096350(A) 申请公布日期 2007.04.12
申请号 JP20060349787 申请日期 2006.12.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MIZUNO KANEKAZU
分类号 H01L21/318;C23C16/42 主分类号 H01L21/318
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