| 摘要 |
PROBLEM TO BE SOLVED: To provide a SiC semiconductor device capable of improving its channel mobility, and to provide the method of manufacturing the same. SOLUTION: During the time of heat reduction in a gate oxide film forming step, heat is made to drop down to below the termination/regeneration temperature (800 to 900°C) while wet atmosphere is maintained. Therefore, the dangling bond of the interface of a p-type base layer that constitutes the gate oxide film and a channel region can be terminated with an element H or OH. As a result, an inversion-type lateral MOSFET with high channel mobility can be obtained. COPYRIGHT: (C)2007,JPO&INPIT
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