| 摘要 |
PROBLEM TO BE SOLVED: To provide a uniform workability of a plasma CVD insulating film and a uniform influence on a thin-film transistor characteristic (a threshold or the like) to stabilize the thin-film transistor characteristic (the threshold or the like). SOLUTION: A silicon nitride film 17 is formed on a substrate 12 arranged on a lower electrode 11 within each vacuum chamber 1 by a plasma CVD. The etching rate of the silicon nitride film 17 formed in each vacuum chamber 1 is measured. The temperature of the substrate 12 is controlled by controlling a heater 13 so that those etching rates are in the predetermined range (for instance, not less than 10% nor more than 10% of the target value). COPYRIGHT: (C)2007,JPO&INPIT
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