| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor and the manufacturing method of the same capable of optimally compatible with both of the suppression of operation of a parasitic bipolar transistor, and of the reduction of on-resistance of a double diffused MOS (metal oxide semiconductor) transistor. SOLUTION: Two kinds of p-type impurities of boron having higher solid solubility with respect to silicon, and indium having lower solid solubility with respect to silicon, are diffused into a body region 10 while the ratio of concentration of indium in a site near the source diffusion layer 12a of the body region 10 is specified so as to be higher than that in the other sites. According to this operation, non-solution indium is made to remain between silicon lattices, and the life time of carrier in the body region 10 is shortened to suppress the operation of parasitic bipolar transistor and improve the steepness of the longitudinal direction in pn connection between the body region 10 and the source diffusion layer 12a, thereby reducing the on-resistance of a DMOS (double diffused metal oxide semiconductor) transistor. COPYRIGHT: (C)2007,JPO&INPIT
|
