发明名称 WRITE CIRCUIT OF MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a memory device in which consumption of current additionally used when an amplification means is operated is reduced by controlling enable/disable of the amplification means responding to a value comparing data of an input/output line of global data with write data in driving of write operation of a DRAM, and a drive method of the memory device. SOLUTION: The memory device is provided with a global data input/output line, an amplyfication means for receiving and amplifying write data and transmitting the amplified write data as global data to the global data input/output line and a control means which compares a logical value of the write data input to the amplification means with a logical value of the global data of the input/output line of the global data, and when the logical values are same, disables the amplification means. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007095255(A) 申请公布日期 2007.04.12
申请号 JP20060180508 申请日期 2006.06.29
申请人 HYNIX SEMICONDUCTOR INC 发明人 SHIN BEOM-JU
分类号 G11C11/409 主分类号 G11C11/409
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