发明名称 |
Methode zur Herstellung von Gräben in einem Halbleiterbauelement |
摘要 |
There is disclosed a method of fabricating a semiconductor device which includes the steps of forming a trench (4), and repeating the formation and removal of an oxide film (a sacrificial oxide film) twice to provide a rounded configuration (5b) of an opening portion of the trench (4) and a rounded configuration (6b) of a bottom thereof and to draw defects in a semiconductor layer into a silicon oxide film (8), reducing the defects adjacent the inner wall of the trench (4), whereby electric field concentration on a gate is prevented and the mobility of carriers in channels is improved for an improvement in characteristic, particularly an on-state voltage, of a power device. |
申请公布号 |
DE69534955(T2) |
申请公布日期 |
2007.04.12 |
申请号 |
DE1995634955T |
申请日期 |
1995.02.06 |
申请人 |
MITSUBISHI DENKI K.K. |
发明人 |
NAKAMURA, KATSUMI;MINATO, TADAHARU;TOMINAGA, SHUUICHI;SHIOZAWA, KATSUOMI |
分类号 |
H01L21/336;H01L29/74;H01L21/331;H01L21/76;H01L21/762;H01L21/763;H01L29/06;H01L29/24;H01L29/423;H01L29/739;H01L29/749;H01L29/78;H01L29/786;H01L29/861 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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