SINGLE-CRYSTAL SEMICONDUCTOR FABRICATION DEVICE AND FABRICATION METHOD

摘要

A side upper-stage heater (10) has a current flow path width widened at the heater lower portion as compared to the heater upper portion. Thus, the current flow path cross sectional area of the side upper-stage heater (10) is greater at the heater lower portion than the heater upper portion. Accordingly, the resistance value is reduced at the heater lower portion as compared to the heater upper portion and the heating value is relatively reduced at the heater lower portion than the heater upper portion. On the other hand, a side lower-stage heater (20) has a current flow path width widened at the heater upper portion as compared to the heater lower portion. Thus, the current flow path cross sectional area of the side lower-stage heater (20) is greater at the heater upper portion than the heater lower portion. Accordingly, the resistance value is reduced at the heater upper portion as compared to the heater lower portion and the heating value is relatively reduced at the heater upper portion than the heater lower portion.