HIGH DENSITY, HIGH Q CAPACITOR ON TOP OF PROTECTIVE LAYER

摘要

In accordance with the invention, there are methods for making and there is an integrated circuit (100) comprising a semiconductor substrate (105) comprising device elements and a metallization layer (110) interconnecting the device elements and having an uppermost layer (115). The integrated circuit can also include a protective overcoat (120) formed over the metallization layer, the protective overcoat having a plurality of patterned regions (116a-c) that expose portions of the metallization layer, a first conductive layer (125) formed on the protective overcoat, and a dielectric layer formed over the first conductive layer. The integrated circuit can further include a second conductive layer (160) formed over the dielectric layer and a plurality of sidewall spacers (142) contacting end portions of the first conductive layer.