发明名称 SEMICONDUCTOR MEMORY AND ITS DRIVE METHOD
摘要 PROBLEM TO BE SOLVED: To reduce the skew in each bank and reduce the current consumed to drive the global signals by controlling to change the drive capability of the global signal driver for each bank according to the distance for transmitting the global signal by using the bank address used only in one bank at a time depending on the distance to transmit the global signals. SOLUTION: The global signal driver has a drive controller to decode the bank address and to output the drive control signals setup differently from one another depending on the distance to transmit the global signals to the banks, and a driver to control the drive size of the global signals in different values corresponding to the distance to transmit the global signals to the banks according to the state that the drive control signals are selectively activated and to output to the above banks. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007095262(A) 申请公布日期 2007.04.12
申请号 JP20060182223 申请日期 2006.06.30
申请人 HYNIX SEMICONDUCTOR INC 发明人 HA SUNG JOO;KIM YONG-MI
分类号 G11C11/407;G11C11/401 主分类号 G11C11/407
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