| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition which can more suitably used in polishing to form wiring of a semiconductor device. <P>SOLUTION: The polishing composition contains a triazole having a six membered ring skeleton with a hydrophobic functional group such as tolyl triazole, a water soluble polymer such as pullulan, an oxidizer such as hydrogen peroxide, and an abrasive grain such as colloidal silica. The tolyl triazole content of the polishing composition is 3 g/L or less, and the pH of the polishing composition is 7 or more. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
