| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent dispersion of threshold voltage after write-in of data of an EEPROM. <P>SOLUTION: When parasitic resistance between a source and a bit line BL of a memory cell M00 of even number column is larger than parasitic resistance between a source and a bit line BL of a memory cell M01 of odd number, a cell resistance compensation part 40 having a resistor 43 for compensation of which the resistance value is equal to resistor R00 is provided between the bit line BL0 and a ground potential GND. When the memory cell M00 is selected by a power source switching address/AY0 for drain cell, a transistor 41 is turned on by the same signal/AY0. When the memory cell M01 is selected by a power source switching address AY0 for drain cell, a transistor 42 is turned on by the same signal AY0. A resistor 43 is inserted by the transistor 42, resistance values from sources of memory cells M00, M01 to the ground potential GND are made equal, dispersion of threshold voltage after write-in of data is suppressed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
