| 摘要 |
PROBLEM TO BE SOLVED: To provide an end face light emission type semiconductor laser of a group III nitride compound having a structure capable of reducing the spread of an FFP without increasing the threshold current in the L-I curve. SOLUTION: In the structure of the semiconductor laser, a clad layer on the n-type side of an active layer has a two-layer structure, and the refractive index of a first semiconductor layer nearer to the active layer between the above-mentioned two layers is lower than that of a second semiconductor layer farther from the active layer. COPYRIGHT: (C)2007,JPO&INPIT
|
