| 摘要 |
An insulated gate field effect transistor has a drain region ( 2,4 ), a body region ( 6 ) of opposite conductivity type and a source region ( 8 ) and an insulated gate ( 14 ) extending laterally over the body region ( 6 ), defining a channel region ( 30 ) extending in the body region ( 6 ) from a source end adjacent to the source region ( 8 ) to a drain end adjacent to a drain end part ( 26 ) of the drain region ( 4 ). A conductive shield plate ( 22 ) is provided adjacent to the drain end for shielding the gate. Embodiments include a shield plate extension ( 32 ) extending over the drain region from the shield plate ( 22 ) towards the gate ( 14 ).
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