| 摘要 |
A method of forming a thin film transistor on a substrate including an insulating layer and layers of etchable material over the insulating layer by depositing a layer of photoresist made of polymers that are altered by actinic energy. In the method, an amine cross-linking agent is used with portions of the photoresist. The photoresist is differentially exposed to actinic energy to convert portions of the photoresist and portions are removed. Etching is selectively performed, followed by development of the remaining photoresist, followed by additional etching. |
