发明名称 METAL INTERCONNECT STRUCTURE FOR A MICROELECTRONIC ELEMENT
摘要 <p>An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned opening, and a dielectric cap overlying the metal feature. The dielectric cap has an internal tensile stress, the stress helping to avoid electromigration from occurring in a direction away from the metal line, especially when the metal line has tensile stress.</p>
申请公布号 WO2007039385(A1) 申请公布日期 2007.04.12
申请号 WO2006EP66077 申请日期 2006.09.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;YANG, CHIH-CHAO;CHANDA, KAUSHIK;CLEVENGER, LAWRENCE;WANG, YUN-YU;YANG, DAEWON 发明人 YANG, CHIH-CHAO;CHANDA, KAUSHIK;CLEVENGER, LAWRENCE;WANG, YUN-YU;YANG, DAEWON
分类号 H01L23/532;H01L21/768 主分类号 H01L23/532
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