METAL INTERCONNECT STRUCTURE FOR A MICROELECTRONIC ELEMENT
摘要
<p>An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned opening, and a dielectric cap overlying the metal feature. The dielectric cap has an internal tensile stress, the stress helping to avoid electromigration from occurring in a direction away from the metal line, especially when the metal line has tensile stress.</p>
申请公布号
WO2007039385(A1)
申请公布日期
2007.04.12
申请号
WO2006EP66077
申请日期
2006.09.06
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;YANG, CHIH-CHAO;CHANDA, KAUSHIK;CLEVENGER, LAWRENCE;WANG, YUN-YU;YANG, DAEWON