| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for gettering a metal element for accelerating crystallization by forming an amorphous silicon film containing a rare gas at high speed without damaging to a crystalline semiconductor film. SOLUTION: The crystalline semiconductor film containing an element for accelerating crystallization of a semiconductor film is formed on a substrate having an insulating surface. An oxide film is formed on the crystalline semiconductor film. By using a plasma processing apparatus for generating a plasma having the electron temperature of 0.5 eV to 1.5 eV and the electron concentration of 1.0×10<SP>11</SP>cm<SP>-3</SP>to 1.0×10<SP>13</SP>cm<SP>-3</SP>, the amorphous silicon film containing a rare gas element is formed on the oxide film, and then the crystalline semiconductor film, the oxide film and the amorphous silicon film containing the rare gas are heated to remove the element for accelerating crystallization of the semiconductor film from the crystalline semiconductor film, in a method for manufacturing a semiconductor device. COPYRIGHT: (C)2007,JPO&INPIT
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