| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic element that uses a carbon nanostructure and has new characteristics. <P>SOLUTION: An n-conductive carbon nanowall 73 is formed on a p-conductive silicon substrate 70. Gold is deposited onto the end face of the n-conductive carbon nanowall 73 by an EB deposition method, and a first electrode 75 is formed. Gold is deposited onto the rear surface of the p-conductive silicon substrate 70 by the EB deposition method, and a second electrode 76 is formed. In this manner, the p-conductive silicon substrate 70 is joined to the n-conductive carbon nanowall 73 for forming a pn junction, and the photovoltaic element is formed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
