| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device preventing the peeling of a re-wiring section formed by a wafer-level CSP, and capable of forming a fine wiring, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor substrate has a substrate in which an electrode is formed on at least one surface, an insulating resin layer 11 coating one surface of the substrate, and a linear wiring 15 coating the insulating resin layer 11 and being electrically connected to the electrode. The wiring 15 constitutes a laminate composed of seeds 13 and a conductive section 14 arranged on the seed 13, and at least insulating reinforcing members 19 are buried into undercut sections in side-face lower sections in the longitudinal direction of the laminate. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
