发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an internal address generator for reducing current consumption. SOLUTION: The internal address generator includes: a read address generation means for generating an external address as a plurality of AL delay addresses with delay on the basis of an additive drive clock and outputting a signal corresponding to set additive latency as an additive address; a write address generation means for generating the additive address as a plurality of CL delay addresses with delay time on the basis of a CAS drive clock and outputting a signal corresponding to set CAS latency as a write address; a drive clock generation means for outputting an internal clock as the additive drive clock or the CAS drive clock in response to a write section signal to be active at the time of the additive latency and write drive; and an output means for outputting the additive address or the write address as an internal column address in response to the write section signal. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007095261(A) 申请公布日期 2007.04.12
申请号 JP20060182163 申请日期 2006.06.30
申请人 HYNIX SEMICONDUCTOR INC 发明人 KIM JI-YEOL;SHIN BEOM-JU
分类号 G11C11/407 主分类号 G11C11/407
代理机构 代理人
主权项
地址