发明名称 |
METHOD OF FABRICATING OPENINGS AND CONTACT HOLES |
摘要 |
A substrate having an etch stop layer and at least a dielectric layer disposed from bottom to top is provided. The dielectric layer is then patterned to form a plurality of openings exposing the etch stop layer. A dielectric thin film is subsequently formed to cover the dielectric layer, the sidewalls of the openings, and the etch stop layer. The dielectric thin film disposed on the dielectric layer and the etch stop layer is then removed.
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申请公布号 |
US2007082489(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
US20050163149 |
申请日期 |
2005.10.06 |
申请人 |
TSAO PO-CHAO;HUANG CHANG-CHI;CHEN MING-TSUNG |
发明人 |
TSAO PO-CHAO;HUANG CHANG-CHI;CHEN MING-TSUNG |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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