| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element for reducing noise caused by spin transfer torque, a magnetoresistance effect head, a magnetic storage device, and a magnetic memory. SOLUTION: Inside a magnetization fixing layer or a magnetization free layer of the magnetoresistance effect element having the magnetization fixing layer, a non-magnetic layer and the magnetization free layer, a layer including one of Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is arranged. COPYRIGHT: (C)2007,JPO&INPIT |
