| 摘要 |
Methods for characterizing a semiconductor material using optical metrology are disclosed. In one respect, a electromagnetic radiation source may be directed in a direction substantially parallel to patterns on a semiconductor material. A polarized spectroscopic reflectivity may be obtained, and a critical point data may be determined. Using the critical point data, physical dimensions of the patterns may be determined. In other respects, using optical metrology techniques, a critical point data relating to electron mobility may be determined.
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