发明名称 PHOTOELECTRIC CONVERTING CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoelectric converting circuit which has good response and high sensitivity. <P>SOLUTION: The transistor T1 of the photoelectric converting circuit 10 constitutes a source follower circuit; a photodiode PD is connected between the gate and source of the transistor T1 through a capacitor C1, and the gate of the transistor T 1 is connected to a second high-potential power source Vg through a resistance R1. The anode of the photodiode PD and the gate of the transistor T1 are separated in terms of direct current by the capacitor C1, so a reverse bias voltage of the photodiode PD is set with the resistance value of a resistance R2 connected to the source of the transistor T1 irrelevantly to the gate voltage of the transistor T1. Then an output voltage Vo is output while the reverse bias voltage of the photodiode PD is held constant. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007096067(A) 申请公布日期 2007.04.12
申请号 JP20050284709 申请日期 2005.09.29
申请人 SUNX LTD 发明人 NAMIENO MAKOTO
分类号 H01L31/10 主分类号 H01L31/10
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