GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a gallium nitride based semiconductor light emitting device in which deterioration in characteristics of the device due to heat is prevented and further emission efficiency of the device is increased by improving heat dissipation performance of a sapphire substrate, and to provide a method of manufacturing the same.

SOLUTION: The device includes the sapphire substrate 201 wherein at least one groove 208 is formed at the bottom thereof; a heat conductive layer 209, having thermal conductivity higher than that of the sapphire substrate, which is formed on the bottom surface of the sapphire substrate so as to fill the groove; an n-type nitride semiconductor layer 202 formed on the sapphire substrate; an active layer 203 and a p-type nitride semiconductor layer 204 formed in this order on a specified region of the n-type nitride semiconductor layer; and a p-type electrode 206 and an n-type electrode 207 formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

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