| 摘要 |
PROBLEM TO BE SOLVED: To solve the subject that, since the resistance temperature coefficient of a heat-generating resistor is as large as more than 4,000/°C, when rapid temperature rising is attempted for a wafer exchange or set temperature change, a temperature control is not successful and the temperature variation of the wafer cannot be reduced in a wafer heating apparatus which uses a single substance of metal like Au, Ag or Pt as the heat-generating resistor. SOLUTION: The resistance value distribution of the heat-generating resistor is adjusted on the heat equalizing plate of the wafer heating apparatus by making small the part of the resistance values of the heat-generating resistor. COPYRIGHT: (C)2007,JPO&INPIT |
