发明名称 RINSE TREATING METHOD, DEVELOPMENT PROCESSING METHOD AND DEVELOPING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a rinse treating method capable of drying a substrate without generating a pattern collapse, inhibiting the fluctuation of a pattern line-width, reducing the remaining of a precipitation system defect, and improving productivity in a rinse treatment for the substrate after development processing, a development processing method and a developing device. SOLUTION: The rinse treating method washes the substrate W after an exposure pattern is subjected to development processing. The rinse treating method carries out a step S5 supplying pure water on the substrate W and washing the substrate by pure water, a step S6 supplying, on the substrate W, a first rinsing liquid composed of a surface active agent having a specified concentration and washing the substrate by the first rinsing liquid, and a step S7 supplying, on the substrate W, a second rinsing liquid composed of a surface active agent having a concentration lower than the first rinsing liquid and washing the substrate by the second rinsing liquid. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007095888(A) 申请公布日期 2007.04.12
申请号 JP20050281541 申请日期 2005.09.28
申请人 TOKYO ELECTRON LTD 发明人 SHIMOAOKI TAKESHI;KITANO JUNICHI
分类号 H01L21/027;G03F7/30;G03F7/32 主分类号 H01L21/027
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