发明名称 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition method for considerably shortening the time required for generating an interlayer insulating film, and a film deposition apparatus for performing the film deposition method. SOLUTION: In the film deposition method, an interlayer insulating film for insulating a reading head and a writing head from each other which are provided in a layer in a head of a hard disk or the like by the ALD method. The film deposition method includes a heating step of heating a substrate at the predetermined temperature of substantially 200°C, and a reaction step of performing the film deposition by exposing the surface of the substrate to the alternate surface reaction of a reactive object such as TMA in vacuum while maintaining the surface of the substrate at the predetermined temperature, and growing a thin film on the substrate. In the reaction step, when the thin film is deposited on one substrate, the heating step is performed on the second substrate to be film-deposited in the reaction step next to the first substrate. The film deposition apparatus 1 comprises an ALD chamber 40, a heating and etching chamber 30 provided separately from the ALD chamber 40. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007092161(A) 申请公布日期 2007.04.12
申请号 JP20050287134 申请日期 2005.09.30
申请人 TDK CORP 发明人 HOTTA AKIHIRO;MATSUI SATOSHI;ISHIYAMA SHIGEKI;KOSUKEGAWA MINORU
分类号 C23C16/52;G11B5/31 主分类号 C23C16/52
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