发明名称 |
Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device |
摘要 |
A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single crystal substrate includes forming a nitride based single crystal layer on a preliminary substrate; forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based single crystal layer and hardening the applied adhesive material; and separating the nitride based single crystal layer from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate. The method for manufacturing the nitride based single crystal substrate is applied to the manufacture of a nitride based semiconductor device having a vertical structure.
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申请公布号 |
US2007082486(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
US20060492009 |
申请日期 |
2006.07.25 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
YANG JONG I.;PARK KI Y. |
分类号 |
H01L21/44;H01L33/32;H01L21/302;H01L21/461;H01L33/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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