| 摘要 |
An iPVD system (200A, 200B) is programmed to deposit uniform material (115, 120), such as a metallic material, into high aspect ratio nano-sized features (110) on semiconductor substrates (105) using a process that enhances the feature filling (130C) compared to the field deposition (106), while maximizing the size of the grain features in the deposited material opening (140) at the top of the feature during the process. Sequential deposition and etching are provided by controlling DC and high density power levels and other parameters. |
