Layer arrangement production, for use in microelectronic devices, comprises bonding together partial layer systems contacted with oxide layer interfacing with additional nitride layer to ensure high energy bonding

摘要

In the production of a layer arrangement (500) by: (a) forming an oxide layer (303) on a first partial layer arrangement (PLA) (300) using non-densified tetraethyl orthosilicate material; (b) forming an additional layer (358) on a second PLA; (c) contacting the PLA's, with the oxide layer and the additional layer having a common interface; and (d) thermally treating, the additional layer formed in step (b) is a nitride layer. Production of a layer arrangement (500) involves: (a) forming an oxide layer (303) on a first partial layer arrangement (PLA) (300) (with at least one layer) using non-densified tetraethyl orthosilicate (TEOS) material; (b) forming an additional layer (358) on a second PLA (with at least one layer); (c) mechanically contacting the first and second PLA's, with the oxide layer on the first PLA and the additional layer on the second PLA having a common interface; and (d) thermally treating the assembly. The additional layer formed in step (b) is a nitride layer. An independent claim is included for the LA formed by the process.