| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-receiving element where high photosensitivity can be obtained on a short-wavelength side, for example, at 405 nm. <P>SOLUTION: In a light receiver 17, p-type embedded diffusion layers 20a, 20b and 20c are formed into an n-type epitaxial layer 3. The distance from the surface of the n-type epitaxial layer 3 to the surface d12 of the p-type embedded diffusion layers 20a, 20b and 20c is set to be within a range of 1 to 10 μm, and the thickness t11 of the p-type embedded diffusion layers 20a, 20b and 20c is set to be within the range of 0.1 to 2 μm. <P>COPYRIGHT: (C)2007,JPO&INPIT |
