发明名称 PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To eliminate the occurrence of particles and suppress the occurrence of defects at the processings a processed film. <P>SOLUTION: The invention comprises steps of forming a liquid film 204 on the principal surface of a substrate supplying application film, forming medicinal solution 206 containing solvent on the substrate, forming a processed film 207 by removing a part of the solvent contained in the liquid film 204, selectively irradiating processing light on the processing region of the processed film 207, selectively removing the processed film 207, and carrying out a heating process for almost completely removing the solvent contained in the processed film 207, after the irradiation of the processing light. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007096340(A) 申请公布日期 2007.04.12
申请号 JP20060319100 申请日期 2006.11.27
申请人 TOSHIBA CORP 发明人 TAKEISHI TOMOYUKI;KAWANO KENJI;IKEGAMI HIROSHI;WATASE MASAMI;ITO SHINICHI
分类号 H01L21/027;B23K26/36;B23K101/40;H01L21/302 主分类号 H01L21/027
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