| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To accomplish a high frequency switch circuit which deals with multi-bands while suppressing an insertion loss or distortion characteristic deterioration. <P>SOLUTION: A first switch circuit 35 is comprised of FETs 12, 13, and a second switch circuit 36 is comprised of FETs 14-16. The first switch circuit 35 and the second switch circuit 36 connect common input/output terminals B1, B2 for high frequency signals to connecting terminals A2, A3 in a capacitive element unit 37 including three connecting terminals A1-A3, respectively, so that one compound high frequency switch circuit is constituted. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
