| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus for preventing the deterioration of the quality of a single crystal silicon by reducing falling of dust to a silicon melt. <P>SOLUTION: The flow rate of Ar gas passing through the gap between the lower end of a cylindrical body 6 and a heat shielding body 5 is controlled by adjusting the relative position of a passage for pulling the single crystal silicon, the cylindrical body 6 and the heat shielding body 5. For example, when the area of the cross section, included in the flat surface orthogonal to the pulling axis of the crystal, in the annular space formed with the side surface of the single crystal silicon and the inner wall surface of the cylindrical body is denoted as S1, and the area of the side surface of a part, positioned between the cylindrical body and the heat shielding body, in the cylindrical space extending from the lower end of the cylindrical body 6 is denoted as S2, the ratio S2/S1 is adjusted to be <1.15. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
