| 摘要 |
A method for programming a non-volatile memory device includes applying a first dummy voltage to a Multi-Level Cell (MLC). A first program voltage is applied to the MLC to program the MLC, the first program voltage being applied to the MLC after the first dummy voltage has been applied to the MLC. The MLC is verified whether or not the MLC has been programmed correctly by the first program voltage. A second dummy voltage is applied to the MLC after the first dummy voltage has been applied, the second dummy voltage being N volt higher than the first dummy voltage, wherein the second dummy voltage applied to the MLC is of sufficiently low voltage, so that the second dummy voltage does not change an initial state of the MLC. A third dummy voltage is applied to the MLC after the second dummy voltage has been applied, the third dummy voltage being N volt higher than the second dummy voltage.
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