发明名称 Thin film transistor
摘要 A thin film transistor includes a semiconductor layer formed on a polycrystalline silicon layer crystallized by a super grain silicon (SGS) crystallization method. The thin film transistor is patterned such that the semiconductor layer does not include a seed or a grain boundary created when forming the semiconductor layer on the polycrystalline silicon layer.
申请公布号 US2007082433(A1) 申请公布日期 2007.04.12
申请号 US20060515903 申请日期 2006.09.06
申请人 SAMSUNG SDI CO., LTD. 发明人 YANG TAE-HOON;LEE KI-YONG;SEO JIN-WOOK;PARK BYOUNG-KEON
分类号 H01L21/84;H01L21/00;H01L29/04;H01L29/15;H01L31/036 主分类号 H01L21/84
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