发明名称 |
Thin film transistor |
摘要 |
A thin film transistor includes a semiconductor layer formed on a polycrystalline silicon layer crystallized by a super grain silicon (SGS) crystallization method. The thin film transistor is patterned such that the semiconductor layer does not include a seed or a grain boundary created when forming the semiconductor layer on the polycrystalline silicon layer.
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申请公布号 |
US2007082433(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
US20060515903 |
申请日期 |
2006.09.06 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
YANG TAE-HOON;LEE KI-YONG;SEO JIN-WOOK;PARK BYOUNG-KEON |
分类号 |
H01L21/84;H01L21/00;H01L29/04;H01L29/15;H01L31/036 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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