| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithography method capable of achieving a nano-meter-sized finer resist pattern. <P>SOLUTION: In this lithography method for transferring a circuit pattern 15 drawn in a photomask 13, a substrate 21 having an electron beam resist film formed on the surface thereof is arranged in proximity to the patterning surface in the photomask 13 having the circuit pattern 15 formed therein beforehand, and the photomask 13 is irradiated with light to whose wavelength the electron beam resist film is not photosensitive, proximity field light is produced from the local region in accordance with the circuit pattern 15 formed in the patterning surface based on the irradiation light, and the resist film 22 in proximity to the patterning surface is exposed to the produced proximity field light. <P>COPYRIGHT: (C)2007,JPO&INPIT |
