CaF2 SINGLE CRYSTAL HAVING INCREASED LASER RESISTANCE, AND ITS PRODUCTION METHOD AND APPLICATION

摘要

PROBLEM TO BE SOLVED: To provide a CaF2material which exhibits high radiation resistance even after it is used as a laser material for a long period of time or it is used under high energy or laser pulses with high energy density.

SOLUTION: A method for producing a CaF2single crystal with increased radiation resistance comprises growing a crystal under controlled conditions of solidification from a melt of a crystal raw material containing a dopant. The melt of CaF2contains, as the dopant, Al and/or Ga and/or In and/or Tl ion.

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