SEMICONDUCTOR HETEROSTRUCTURE AND FORMING METHOD OF SEMICONDUCTOR HETEROSTRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming heterostructure, and a corresponding semiconductor heterostructure having a better surface roughness and/or embedding border plane roughness property.

SOLUTION: A method of forming the semiconductor heterostructure, comprising the steps of: offering a substrate having a first inplane lattice parameter a1; preparing a buffer layer having a second inplane lattice parameter a2; and preparing an upper portion layer on this buffer layer, is characterized in that an additional layer is prepared between the buffer layer and upper portion layer for improving the surface roughness of the semiconductor heterostructure, and in that this additional layer has a third inplane lattice parameter a3locating between the first and second lattice parameters.

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