EPITAXIAL SUBSTRATE FOR FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride-based group III-V semiconductor epitaxial crystal having favorable characteristics even if many micro pipes exist in an SiC ground substrate, and to provide a method of manufacturing the same. SOLUTION: The epitaxial crystal for a field-effect transistor is obtained by growing a nitride-based group III-V semiconductor epitaxial crystal on an SiC single crystal ground substrate 210 with micro pipes by using the epitaxial growth method. The micro pipes spreading through the epitaxial crystal from the SiC single crystal ground substrate 210 are terminated in a GaN blockade layer 201 which is grown up between a transistor operation layer and the ground substrate layer. COPYRIGHT: (C)2007,JPO&INPIT