| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device including an MIS type transistor having a gate electrode consisting of metal silicide, and a source-drain region having a deep diffusion layer and a shallow diffusion layer. SOLUTION: The gate electrode comprises a gate insulating film, a first gate electrode film, a first insulating film, and a second gate electrode film. The ion implantation is carried out so as to form a first diffusion layer by using as a mask the gate electrode and a first side wall formed at the side of the gate electrode. A second side wall 13 is formed in the side of the gate electrode after removing the first side wall, and the ion implantation is carried out by using as a mask the gate electrode and the second side wall so as to form a second diffusion layer. A first metal film is formed on the second gate electrode film and is made to react so that the second gate electrode film may be a first reaction layer. The first reaction layer on the gate electrode is removed, and after forming an interlayer dielectric 21, it is made flat until the upper surface of the first gate electrode film of the gate electrode is exposed. A second reaction layer 6a has a portion wherein the second metal film is formed, it is made to react with the first gate electrode film, and the first gate electrode film is brought into contact with the gate insulatiing film. COPYRIGHT: (C)2007,JPO&INPIT
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