| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which restrains the refinement of silicon existent at a lower part of a High-k insulating film used as a gate insulating film. SOLUTION: The manufacturing method of the semiconductor device comprises processes of: forming a high specific dielectric insulating layer on an SOI substrate; forming a gate electrode layer on the high specific dielectric insulating layer; forming a resist layer on the gate electrode layer; selectively removing the gate electrode layer using the resist layer as a mask; and removing the resist layer by ashing processing using gas not containing oxygen. COPYRIGHT: (C)2007,JPO&INPIT
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