| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof wherein the deterioration of reliability and an yield can be prevented. SOLUTION: This semiconductor device comprises a semiconductor substrate 11 wherein a via hole 18 is formed, an insulating film 13 formed on the surface of the semiconductor substrate 11, a sputtered metal layer 14 formed on the insulating film 13, the inner wall of the via hole 18 and the surface of the semiconductor substrate 11, a first plating layer 15 formed on the sputtered metal layer 14 except the sputtered metal layer 14 on the insulating film 13, and a second plating layer 16 formed on the first plating layer 15 and the sputtered metal layer 14. COPYRIGHT: (C)2007,JPO&INPIT
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